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Semiconductor

  |  Fri 31 Jan 2025

Alexandria, Feb. 1 -- HZO Inc has secured a patent on increased deposition efficiency via dual reactor system. Askin Iii Robert Eugene and Clancy Sean developed the invention. The patent application number is US202117239516 20210423. The patent publication number is US12209199 (B2). International Patent Classification codes a..
 
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