Semiconductor
| Wed 18 Mar 2026
Beijing, March 18 -- Dezhou University has submitted a patent application for MoS2-FET Device and Preparation Method Thereof. This invention was developed by Xin Jianhui, Wu Jialin, Xu Chenyue, Huang Yuanpeng, Yan Mengxia, Li Meng, Yu Xue, Gui Kaixin and Fu Yuxin.
The patent application number is CN20251108259 20250722. The p..