Semiconductor
| Sat 30 May 2026
Alexandria, May 30 -- Yangtze Memory Technologies has been awarded a patent for Memory Devices and Methods for Forming the Same. This invention was developed by Zhang Kun, Yang Yuancheng, Zhou Wenxi, Xia Zhiliang, Zhao Dongxue, Yang Tao, Liu Lei, Wang Di and Huo Zongliang.
The patent application number is US202318092777 20230..