Semiconductor
| Mon 22 Dec 2025
Beijing, Dec. 22 -- Roehm has applied Chinese patent for Nitride Semiconductor Device. Takado Shinya, Otake Hirotaka and Nagase Kazuya developed it.
The patent application number is CN20238072722 20230926. The patent publication number is CN120052069 (A). International Patent Classification codes are H10D30/01, H10D30/47, H10..