Semiconductor
| Sat 04 Apr 2026
Beijing, April 4 -- State Intellectual Property Office of China has released Applied Materials patent application for Method for Forming Low K Dielectric Materials. This invention was developed by Kaliappan Muthu, Xie Bo, Yao Simin, Xia Liqun, Hafert Michael, Lu Rui, Li Xiaobo, Lang Chi-i and Venkatraman Subramanian.
The patent..