Semiconductor
| Wed 14 Jan 2026
Geneva, Jan. 14 -- Yangtze Memory Technologies has filed a patent application for Memory Device and Method of Forming the Same. This invention was developed by Li Zhaosong, Wei Jianlan, Zhang Liyuan, Li Sizhe, Mao Xiaoming, Gao Jing, Tang Yi, Wang Zhiguo and Huo Zongliang.
The patent application number is WO2024CN103041 20240..