Semiconductor
| Fri 13 Nov 2026
Beijing, Nov. 13 -- Zhejiang Qisheng Electronic Co Ltd has obtained a patent for high-voltage mos tube with heat dissipation structure. This invention was developed by Yu Xingzhe, Chen Weizhao, Zhao Junli, Cai Nan, Su Zhonggen, Li Kunhua, Ge Junxu, Lin Meiyuan, Xu Linchao, Lin Shuting, Zhang Min, Chen Erzhen, Chen Hongming, Zhua..