Semiconductor
| Thu 15 May 2025
Munich, May 16 -- European Patent Office has published Sicc Co Ltd patent application for high-quality sic crystal, crystal bar, substrate, and semiconductor device. The invention was developed by Gao Chao, Gao Yuhan, Yang Xiaoli, Shi Zhiqiang, Peng Hongyu, Pan Yani, Fang Shuai and Ning Xiuxiu.
The patent application number i..