Semiconductor
| Fri 16 Oct 2026
Munich, Oct. 15 -- Intel has submitted a patent application for Transistor Structures with Scavenging Material Within Source/drain Contact Metallization. This invention was developed by Zelick Nancy, Metz Matthew, Jezewski Christopher, Karpov Ilya, Dewey Gilbert, Haratipour Nazila, Li Wenshen, Michaelos Thoe, Sen Gupta Arnab, Ch..